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Freescale Semiconductor Technical Data
Document Number: MRF8S7120N www..com Rev. 0, 5/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 19.2 19.2 19.2 D (%) 36.6 37.1 38.1 Output PAR (dB) 6.3 6.4 6.3 ACPR (dBc) --38.3 --38.2 --37.6
MRF8S7120NR3
728-768 MHz, 32 W AVG., 28 V SINGLE W-CDMA LATERAL N-CHANNEL RF POWER MOSFET
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 178 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness * Typical Pout @ 1 dB Compression Point 125 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * 225C Capable Plastic Package * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
CASE 2021-03, STYLE 1 OM-780-2 PLASTIC
Symbol VDSS VGS VDD Tstg TC TJ
Value --0.5, +70 --6.0, +10 32, +0 --65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 31.5 W CW, 28 Vdc, IDQ = 600 mA, 748 MHz Case Temperature 80C, 120 W CW, 28 Vdc, IDQ = 600 mA, 748 MHz Symbol RJC Value (2,3) 0.65 0.55 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S7120NR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
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Table 4. Moisture Sensitivity Level
Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 70 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 460 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) 1.5 2.3 0.1 2.3 3.0 0.2 3.0 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg., f = 768 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18.0 35.0 5.7 -- -- 19.2 38.1 6.3 --37.6 --18 21.0 -- -- --36.0 --9 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 728 MHz 748 MHz 768 MHz 1. Part internally matched both on input and output. Gps (dB) 19.2 19.2 19.2 D (%) 36.6 37.1 38.1 Output PAR (dB) 6.3 6.4 6.3 ACPR (dBc) --38.3 --38.2 --37.6 IRL (dB) --13 --15 --18 (continued)
MRF8S7120NR3 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 111 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 40 MHz Bandwidth @ Pout = 32 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 125 12
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Max -- --
Unit W MHz
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 728--768 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
45 0.1 0.016 0.0047
-- -- -- --
MHz dB dB/C dB/C
MRF8S7120NR3 RF Device Data Freescale Semiconductor 3
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B1
C27 C7 R1 C8
C25 C20 C21 C22 C23
C2
C4 C5
R2
C10 CUT OUT AREA C12 C11 C13 C9 C14 C15
C1
C26 C3 C6
C16 C17
C18 C19
MRF8S7120N Rev. 0
C24
Figure 1. MRF8S7120NR3 Test Circuit Component Layout Table 6. MRF8S7120NR3 Test Circuit Component Designations and Values
Part B1 C1, C3, C4 C2, C7 C5, C6, C11, C12 C8 C9, C10 C13 C14 C15, C16, C17, C20, C21 C18, C19, C22, C23 C24, C25 C26 C27 R1 R2 PCB RF Ferrite Bead 2.7 pF Chip Capacitors 100 pF Chip Capacitors 8.2 pF Chip Capacitors 47 F, 50 V Electrolytic Capacitor 12 pF Chip Capacitors 5.6 pF Chip Capacitor 1.2 pF Chip Capacitor 39 pF Chip Capacitors 10 F, 50 V Chip Capacitors 470 F, 63 V Electrolytic Capacitors 1 pF Chip Capacitor 4.7 F, 50 V Chip Capacitor 1 k, 1/4 W Chip Resistor 6.2 , 1/4 W Chip Resistor 0.030, r = 3.5 Description Part Number MPZ2012S300AT000 ATC100B2R7BT500XT ATC100B101JT500XT ATC100B8R2CT500XT 476KXM050M ATC100B120JT500XT ATC100B5R6CT500XT ATC100B1R2BT500XT ATC100B390JT500XT C5750X7R1H106KT MCGPR63V477M13X26--RH ATC100B1R0BT500XT C4532X7R1H475MT CRCW12061K00FKEA CRCW12066R20JNEA TC350 TDK ATC ATC ATC Illinois Cap ATC ATC ATC ATC TDK Multicomp ATC TDK Vishay Vishay Arlon Manufacturer
MRF8S7120NR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D D, DRAIN EFFICIENCY (%) 21 20.6 20.2 Gps, POWER GAIN (dB) 19.8 19.4 19 18.6 18.2 17.8 17.4 17 710 ACPR IRL 720 730 740 750 760 770 780 Gps VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 600 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF PARC 40 38 36 34 32 --37 --37.5 --38 --38.5 --39 790
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--36.5 ACPR (dBc)
--7 --10 --13 --16 --19 --22
IRL, INPUT RETURN LOSS (dB)
0 --0.5 --1 --1.5 --2 --2.5 PARC (dB)
f, FREQUENCY (MHz)
Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 32 Watts Avg.
--10 --20 --30 IM5--U --40 --50 --60 IM5--L IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100 VDD = 28 Vdc, Pout = 111 W (PEP), IDQ = 600 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 748 MHz IM3--U IM3--L
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing
21 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 20 Gps, POWER GAIN (dB) 19 18 17 16 15 0 --1 --2 --3 --4 --5 --6 VDD = 28 Vdc, IDQ = 600 mA, f = 748 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 20 40 60 80 100 70 ACPR D --3 dB = 55 W D, DRAIN EFFICIENCY (%) 60 50 40 30 20 10 120 --25 --30 --35 --40 --45 --50 ACPR (dBc) --20
--1 dB = 28 W --2 dB = 40 W
Gps PARC
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
MRF8S7120NR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
21 VDD = 28 Vdc, IDQ = 600 mA, Single--Carrier W--CDMA ACPR 3.84 MHz Channel Bandwidth, Input Signal PAR = 20 7.5 dB @ 0.01% Probability D on CCDF 19 18 17 16 15 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 748 MHz 768 MHz 748 MHz 728 MHz Gps 768 MHz 728 MHz 70 59 D, DRAIN EFFICIENCY (%) 48 37 26 15 4 300 --20 --27 --34 --41 --48 --55 --62 ACPR (dBc)
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Gps, POWER GAIN (dB)
Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
22 20 18 GAIN (dB) 16 14 12 10 600 VDD = 28 Vdc Pin = 0 dBm IDQ = 600 mA 650 700 750 IRL Gain 0 --5 --10 --15 --20 --25 --30 1000 IRL (dB) 3.84 MHz Channel BW
800
850
900
950
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW
Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S7120NR3 6
Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 600 mA, Pout = 32 W Avg. f MHz 710 720 730 740 750 760 770 780 790 Zsource 0.83 -- j1.35 0.93 -- j1.28 1.01 -- j1.25 1.08 -- j1.25 1.11 -- j1.28 1.10 -- j1.29 1.06 -- j1.28 1.02 -- j1.24 0.99 -- j1.18 Zload 2.23 -- j1.62 2.18 -- j1.47 2.16 -- j1.37 2.15 -- j1.29 2.12 -- j1.24 2.06 -- j1.18 2.00 -- j1.09 1.95 -- j0.97 1.94 -- j0.85
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Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S7120NR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 600 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 64 62 60 Pout, OUTPUT POWER (dBm) 58 56 54 52 50 48 46 44 42 25 27 29 31 33 35 37 39 41 43 45 47 768 MHz 728 MHz Ideal Actual 748 MHz 768 MHz 748 MHz
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Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 728 748 768 P1dB Watts 185 189 165 dBm 52.7 52.8 52.2 200 232 215 P3dB Watts dBm 53.0 53.7 53.3
Test Impedances per Compression Level f (MHz) 728 748 768 P1dB P1dB P1dB Zsource 0.87 -- j2.04 1.05 -- j2.23 1.07 -- j2.05 Zload 1.25 -- j1.39 1.16 -- j1.88 1.15 -- j2.58
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S7120NR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
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MRF8S7120NR3 RF Device Data Freescale Semiconductor 9
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MRF8S7120NR3 10 RF Device Data Freescale Semiconductor
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MRF8S7120NR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File
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For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date May 2010 * Initial Release of Data Sheet Description
MRF8S7120NR3 12 RF Device Data Freescale Semiconductor
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MRF8S7120NR3
Document Number: RF Device Data MRF8S7120N Rev. 0, 5/2010 Freescale Semiconductor
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